TGF2021-12 TriQuint, TGF2021-12 Datasheet

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TGF2021-12

Manufacturer Part Number
TGF2021-12
Description
RF GaAs DC-12GHz 12mm Pwr pHEMT (0.35um)
Manufacturer
TriQuint
Datasheet
1.TGF2021-12.pdf (8 pages)

Specifications of TGF2021-12

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1031678

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TGF2021-12
Manufacturer:
Triquint
Quantity:
1 400
Product Description
The TriQuint TGF2021-12 is a discrete 12
mm pHEMT which operates from DC-12
GHz. The TGF2021-12 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
The TGF2021-12 typically provides
42 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-12 appropriate for high efficiency
applications.
The TGF2021-12 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
DC - 12 GHz Discrete power pHEMT
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com
Key Features and Performance
•
•
•
•
•
•
•
•
Primary Applications
•
•
•
•
•
35
30
25
20
15
10
Frequency Range: DC - 12 GHz
> 42 dBm Nominal Psat
58% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
12mm x 0.35μm Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 900-1500mA
(U
Chip Dimensions: 0.57 x 2.93 x 0.10 mm
5
0
0
nder RF Drive, Id rises from 900mA to 2560mA)
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
2
4
MSG
Frequency (GHz)
6
Product Datasheet
(0.022 x 0.115 x 0.004 in)
8
TGF2021-12
10
12
August 7, 2007
MAG
14
Rev -
16
1

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TGF2021-12 Summary of contents

Page 1

... The maximum power added efficiency is 59% which makes the TGF2021-12 appropriate for high efficiency applications. The TGF2021-12 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2021-has a protective surface passivation layer providing environmental robustness ...

Page 2

... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE I MAXIMUM RATINGS Parameter 1/ TABLE II DC PROBE CHARACTERISTICS = 25 °C, Nominal Minimum Typical - - -1.35 -30 -30 Product Datasheet August 7, 2007 TGF2021-12 Value Notes 12 dBm See note 3 150 °C 320 °C -65 to 150 °C Maximum Unit 3600 - mA 4500 ...

Page 3

... Nominal 10V PARAMETER Idq = 900mA Power Gain 0.947 ∠ 177.7 Power Gain 0.956 ∠ 176.2 TABLE IV THERMAL INFORMATION Test Conditions Idq = 900 mA Pdiss = 9 W Product Datasheet August 7, 2007 TGF2021- 12V Idq = 900mA 41 0.947 ∠ 176 11.5 11 0.955 ∠ 175.8 θ ...

Page 4

... Product Datasheet TGF2021-12 L Drain Unit pHEMT cell Reference Plane Source Drain UPC Source UPC = 1.5 mm Unit pHEMT Cell Idq = 150 mA Idq = 112.5 mA 0.430 0.430 0.430 ...

Page 5

... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Linear Model for 12mm pHEMT L - via = 0.0135 nH (9x UPC 7 10 UPC 6 11 UPC 5 12 UPC 4 13 UPC 3 14 UPC UPC 2 15 UPC 1 16 Product Datasheet August 7, 2007 TGF2021-12 Drain Pads (8x) 5 Rev - ...

Page 6

... Product Datasheet August 7, 2007 TGF2021-12 s12 ang s22 s22 ang deg dB deg 4.64 -1.989 -177.60 2.14 -1.958 -177.91 1.29 -1.927 -177.64 0.92 -1.889 -177.26 ...

Page 7

... Product Datasheet August 7, 2007 TGF2021-12 2.618 [0.103] 2.265 [0.089] 1.945 [0.077] 1.625 [0.064] DRAIN 1.305 [0.051] 0.985 [0.039] 0.665 [0.026] 0.313 [0.012] ...

Page 8

... Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Assembly Process Notes Product Datasheet August 7, 2007 TGF2021-12 8 Rev - ...

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