TGF2021-04 TriQuint, TGF2021-04 Datasheet

RF GaAs DC-12GHz 4mm Pwr pHEMT (0.35um)

TGF2021-04

Manufacturer Part Number
TGF2021-04
Description
RF GaAs DC-12GHz 4mm Pwr pHEMT (0.35um)
Manufacturer
TriQuint
Datasheet

Specifications of TGF2021-04

Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
1.5 S
Gate-source Breakdown Voltage
- 8 V
Package / Case
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1077214

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGF2021-04
Manufacturer:
TriQuint Semiconductor
Quantity:
135
Part Number:
TGF2021-04
Manufacturer:
Triquint
Quantity:
1 400
Part Number:
TGF2021-04-SD
Manufacturer:
Triquint
Quantity:
1 400
Part Number:
TGF2021-04-SG
Manufacturer:
Triquint
Quantity:
1 400
Product Description
The TriQuint TGF2021-04 is a discrete 4 mm
pHEMT which operates from DC-12 GHz.
The TGF2021-04 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
The TGF2021-04 typically provides
> 36 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-04 appropriate for high efficiency
applications.
The TGF2021-04 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-04 has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
DC - 12 GHz Discrete power pHEMT
TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com
Key Features and Performance
Primary Applications
35
30
25
20
15
10
Frequency Range: DC - 12 GHz
> 36 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
4mm x 0.35μm Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 300-500mA
(U
Chip Dimensions: 0.57 x 1.30 x 0.10 mm
5
0
0
nder RF Drive, Id rises from 300mA to 960mA)
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
2
4
MSG
Frequency (GHz)
6
Product Datasheet
(0.022 x 0.051 x 0.004 in)
8
TGF2021-04
10
August 7, 2007
12
MAG
Rev -
14
16
1

Related parts for TGF2021-04

TGF2021-04 Summary of contents

Page 1

... GHz Discrete power pHEMT Product Description The TriQuint TGF2021- discrete 4 mm pHEMT which operates from DC-12 GHz. The TGF2021-04 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2021-04 typically provides > 36 dBm of saturated output power with power gain of 11 dB. The maximum power ...

Page 2

... Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE I MAXIMUM RATINGS TABLE °C, Nominal Minimum Typical - 1200 - 1500 -1.35 -1 -30 - -30 - Product Datasheet August 7, 2007 TGF2021-04 Value Notes dBm 2/ See note 150 °C 4/ 320 °C -65 to 150 °C Maximum Unit - ...

Page 3

... Nominal 10V Idq = 300mA 36 0.852 ∠ 1725 36 59 11.5 0.879 ∠ 167.5 TABLE IV THERMAL INFORMATION Test Conditions Idq = 300 mA Pdiss = 3.6 W Product Datasheet August 7, 2007 TGF2021- 12V UNITS Idq = 300mA 37.5 dBm 0.849 ∠ 170.7 - 36.7 dBm 0.874 ∠ 166.3 - θ ...

Page 4

... Product Datasheet August 7, 2007 TGF2021-04 L Drain Unit pHEMT cell Reference Plane Source Drain UPC Source Vd = 10V Vd = 12V UNITS Idq = 100mA Idq = 75mA 0.450 0.45 0.160 0.19 ...

Page 5

... Linear Model for 4mm pHEMT 4 Gate Pads (4x TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Product Datasheet L - via = 0.0135 nH (5x) 5 UPC Drain Pads (4x) 6 UPC 7 UPC 8 UPC August 7, 2007 TGF2021-04 5 Rev - ...

Page 6

... Product Datasheet August 7, 2007 TGF2021-04 s12 ang s22 s22 ang deg dB deg 15.89 -6.160 -161.81 7.33 -5.842 -168.07 4.06 -5.709 -169.15 2.20 -5.581 -168.96 ...

Page 7

... Bond pads # 5-8: (Drain) 0.090 x 0.090 (0.004 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Mechanical Drawing (Gate) 0.090 x 0.090 (0.004 x 0.004) Product Datasheet August 7, 2007 TGF2021-04 DRAIN Rev - 7 ...

Page 8

... Force, time, and ultrasonics are critical parameters. • Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Assembly Process Notes Product Datasheet August 7, 2007 TGF2021-04 8 Rev - ...

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