TGF2021-02 TriQuint, TGF2021-02 Datasheet

RF GaAs DC-12GHz 2mm Pwr pHEMT (0.35um)

TGF2021-02

Manufacturer Part Number
TGF2021-02
Description
RF GaAs DC-12GHz 2mm Pwr pHEMT (0.35um)
Manufacturer
TriQuint
Datasheet

Specifications of TGF2021-02

Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
750 mS
Gate-source Breakdown Voltage
- 8 V
Package / Case
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1031675

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGF2021-02
Manufacturer:
TriQuint Semiconductor
Quantity:
135
Part Number:
TGF2021-02
Manufacturer:
Triquint
Quantity:
1 400
Product Description
The TriQuint TGF2021-02 is a discrete
2 mm pHEMT which operates from DC-
12 GHz. The TGF2021-02 is designed
using TriQuint’s proven standard
0.35um power pHEMT production
process.
The TGF2021-02 typically provides
> 33 dBm of saturated output power
with power gain of 11 dB. The
maximum power added efficiency is
59% which makes the TGF2021-02
appropriate for high efficiency
applications.
The TGF2021-02 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2021-02 has a protective
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
DC - 12 GHz Discrete power pHEMT
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com
Key Features and Performance
Primary Applications
35
30
25
20
15
10
Frequency Range: DC - 12 GHz
> 33 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
2mm x 0.35μm Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 150-250mA
(U
Chip Dimensions: 0.57 x 0. 79 x 0.10 mm
5
0
0
nder RF Drive, Id rises from 150mA to 480mA)
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
2
4
MSG
Frequency (GHz)
Product Datasheet
6
(0.022 x 0.031 x 0.004 in)
8
TGF2021-02
10
August 7, 2007
12
MAG
14
Rev -
16
1

Related parts for TGF2021-02

TGF2021-02 Summary of contents

Page 1

... GHz Discrete power pHEMT Product Description The TriQuint TGF2021- discrete 2 mm pHEMT which operates from DC- 12 GHz. The TGF2021-02 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2021-02 typically provides > 33 dBm of saturated output power with power gain of 11 dB. The ...

Page 2

... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE I MAXIMUM RATINGS Parameter 1/ TABLE II DC PROBE CHARACTERISTICS = 25 °C, Nominal Minimum Typical - - -1.35 -30 -30 Product Datasheet August 7, 2007 TGF2021-02 Value Notes 12 940 dBm See note 150 °C 320 °C -65 to 150 °C Maximum Unit 600 - mA ...

Page 3

... Idq = 150mA 33.8 50 Power Gain 11 0.728 ∠ 164 Power Gain 11.5 0.778 ∠ 155 TABLE IV THERMAL INFORMATION Test Conditions Idq = 150 mA Pdiss = 1.8 W Product Datasheet August 7, 2007 TGF2021- 12V UNITS Idq = 150mA 34.5 dBm 0.725 ∠ 161.1 - 33.7 dBm 0.771 ∠ 152.5 - θ ...

Page 4

... Product Datasheet August 7, 2007 TGF2021-02 L Drain Unit pHEMT cell Reference Plane Source Drain UPC Source Vd = 10V Vd = 12V Idq = 100mA Idq = 75mA 0.450 0.45 0.160 0.19 0.450 ...

Page 5

... Gate Pads (2x) 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Linear Model for 2mm pHEMT L - via = 0.0135 nH (3x) UPC UPC Product Datasheet August 7, 2007 TGF2021-02 3 Drain Pads (2x Rev - ...

Page 6

... Product Datasheet August 7, 2007 TGF2021-02 s12 ang s22 s22 ang deg dB deg 34.41 -11.025 -98.11 18.42 -11.493 -127.41 11.96 -11.428 -137.24 8.45 -11.181 -140.97 6 ...

Page 7

... Bond pads #3-4: (Drain) 0.090 x 0.090 (0.004 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Mechanical Drawing DRAIN 1 4 Product Datasheet August 7, 2007 TGF2021-02 7 Rev - ...

Page 8

... Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Assembly Process Notes Product Datasheet August 7, 2007 TGF2021-02 8 Rev - ...

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