BGA 612 H6327 Infineon Technologies, BGA 612 H6327 Datasheet - Page 8

• Manufacturer Part Number: BGA 612 H6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Silicon Germanium MMICr

Specifications of BGA 612 H6327

• Mounting Style: SMD/SMT
• Operating Frequency: 2 GHz
• P1db: 7 dBm
• Noise Figure: 2.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 20 mA
• Maximum Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA612H6327XT

Data Sheet
Device Current I
R
Noise figure F = f(f)
V
T
A
CC
Bias
= parameter in °C
2.5
1.5
0.5
= 5V, R
80
70
60
50
40
30
20
10
= parameter in
0
3
2
1
0
0
0
Bias
0.5
1
= 135 , Z
D
Frequency [GHz]
= f(V
2
1
0
V
CC
CC
1.5
3
S
)
[V]
16
= 50
4
2
27
2.5
5
+80°C
+25°C
−20°C
100
150
47
68
6
3
8
Device Current I
V
CC
= 5V, R
25
24
23
22
21
20
19
18
17
16
15
−40
−20
Bias
= parameter in
D
= f(T
0
T
A
A
)
20
[°C]
Measured Parameters
40
Rev. 2.1, 2008-04-24
60
120
150
135
BGA612
80