BGA 612 H6327 Infineon Technologies, BGA 612 H6327 Datasheet - Page 6

• Manufacturer Part Number: BGA 612 H6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Silicon Germanium MMICr

Specifications of BGA 612 H6327

• Mounting Style: SMD/SMT
• Operating Frequency: 2 GHz
• P1db: 7 dBm
• Noise Figure: 2.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 20 mA
• Maximum Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA612H6327XT

Figure 2
Data Sheet
Test Circuit for Electrical Characteristics and S-Parameter
In
Bias-T
GND
In
Top View
GND
Out
6
V
D
Caution:
Device Voltage V
V
D
BGA612_Test_Circuit.vsd
= V
CC
Bias-T
I
D
- R
Bias
V
R
CC
Bias
I
D
= 5V
D
= 135
at Pin Out!
Out
Electrical Characteristics
Rev. 2.1, 2008-04-24
BGA612