BGA 612 H6327 Infineon Technologies, BGA 612 H6327 Datasheet

RF Amplifier RF SILICON MMIC

BGA 612 H6327

Manufacturer Part Number
BGA 612 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet

Specifications of BGA 612 H6327

Mounting Style
SMD/SMT
Operating Frequency
2 GHz
P1db
7 dBm
Noise Figure
2.1 dB
Operating Supply Voltage
2.8 V
Supply Current
20 mA
Maximum Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA612H6327XT
D a t a S h e e t , R e v . 2 . 1 , A p r i l 2 00 8
B G A 6 12
S i l i c on G e r m a n i u m B r o a d b a n d M M IC A m pl i f i e r
S m a l l S i g n a l D i s c r et e s

Related parts for BGA 612 H6327

BGA 612 H6327 Summary of contents

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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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... Previous Version: 2003-11-04 Page Subjects (major changes since last revision) All New Chip Version with integrated ESD protection 5 Electrical Characteristics slightly changed 7-8 Figures updated All Document layout change Trademarks ® SIEGET is a registered trademark of Infineon Technologies AG. Data Sheet 3 BGA612 Rev. 2.1, 2008-04-24 ...

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... Pin connection Description BGA612 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration optimized for a typical supply current The BGA612 is based on Infineon Technologies’ B7HF Silicon Germanium technology. Type BGA612 Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet ...

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Maximum Ratings Table 1 Maximum ratings Parameter Device voltage Device current Current into pin In 1) Input power T Total power dissipation, < 105 °C S Junction temperature Ambient temperature range Storage temperature range ESD capability all pins (HBM: JESD22-A114) ...

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In Figure 2 Test Circuit for Electrical Characteristics and S-Parameter Data Sheet Bias-T In GND V D GND Out Top View Caution: Device Voltage Electrical Characteristics 135 Bias I D ...

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Measured Parameters 2 Power Gain | f( 5V 135 , I = 20mA CC Bias ...

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Device Current parameter in Bias [V] CC Noise figure 5V, R ...

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Package Information 0.3 Figure 3 Package Outline SOT343 Figure 4 Tape for SOT343 Data Sheet 2 ±0 +0.1 -0.05 +0.1 0.6 4x -0.05 0 Pin 1 2.15 9 Package Information 0.9 ...

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