BGA 612 H6327 Infineon Technologies, BGA 612 H6327 Datasheet - Page 3

• Manufacturer Part Number: BGA 612 H6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Silicon Germanium MMICr

Specifications of BGA 612 H6327

• Mounting Style: SMD/SMT
• Operating Frequency: 2 GHz
• P1db: 7 dBm
• Noise Figure: 2.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 20 mA
• Maximum Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA612H6327XT

BGA612, Silicon Germanium Broadband MMIC Amplifier
Revision History: 2008-04-24, Rev. 2.1
Previous Version: 2003-11-04
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Data Sheet
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is a registered trademark of Infineon Technologies AG.
Subjects (major changes since last revision)
New Chip Version with integrated ESD protection
Electrical Characteristics slightly changed
Figures updated
Document layout change
3
Rev. 2.1, 2008-04-24
BGA612