BGA 612 H6327 Infineon Technologies, BGA 612 H6327 Datasheet - Page 4

• Manufacturer Part Number: BGA 612 H6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Silicon Germanium MMICr

Specifications of BGA 612 H6327

• Mounting Style: SMD/SMT
• Operating Frequency: 2 GHz
• P1db: 7 dBm
• Noise Figure: 2.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 20 mA
• Maximum Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA612H6327XT

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Feature
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Applications
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1) Pb-containing package may be available upon special request
Figure 1
Description
BGA612 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized
for a typical supply current of 20 mA
The BGA612 is based on Infineon Technologies’ B7HF Silicon Germanium technology.
Type
BGA612
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
Cascadable 50 -gain block
3 dB-bandwidth: DC to 2.8 GHz with
17.5 dB typical gain at 1.0 GHz
Compression point
Noise figure
Absolute stable
70 GHz
1 kV HBM ESD protection (Pin-to-Pin)
Pb-free (RoHS compliant) package
Driver amplifier for GSM/PCS/CDMA/UMTS
Broadband amplifier for SAT-TV & LNBs
Broadband amplifier for CATV
f
T
Silicon Germanium Broadband MMIC Amplifier
Pin connection
- Silicon Germanium technology
F
50
= 2.1 dB at 2 GHz
P
-1dB
= 7 dBm at 2.0 GHz
IN, 1
Package
SOT343
1)
4
GND, 2,4
Silicon Germanium Broadband MMIC Amplifier
SOT343
Out, 3
Marking
BNs
4
3
Rev. 2.1, 2008-04-24
1
2
BGA612