BGA 751L7 E6327 Infineon Technologies, BGA 751L7 E6327 Datasheet - Page 6
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BGA 751L7 E6327
Manufacturer Part Number
BGA 751L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet
1.BGA_751L7_E6327.pdf
(22 pages)
Specifications of BGA 751L7 E6327
Mounting Style
SMD/SMT
Operating Frequency
800 MHz to 900 MHz
Noise Figure
1.05 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.3 mA, 0.5 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA751L7E6327XT
2
2.1
Table 1
Parameter
Supply voltage
Supply current
Pin voltage
Pin voltage RF Input Pin
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
2.2
Table 2
Parameter
Thermal resistance junction
to soldering point
2.3
Table 3
Parameter
ESD hardness HBM
1) According to JESD22-A114
Data Sheet
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
Thermal Resistance
Thermal Resistance
ESD Integrity
ESD Integrity
1)
Symbol
V
I
V
V
P
T
T
T
Symbol
R
Symbol
V
CC
j
A
stg
CC
PIN
RFIN
RFIN
thJS
ESD-HBM
Values
Min.
-0.3
-0.3
-0.3
-30
-65
Value
150
Value (typ.)
2000
BGA751L7 - Low Power Single-Band UMTS LNA
6
Max.
3.6
10
V
0.9
4
150
85
150
CC
+0.3
Unit
V
mA
V
V
dBm
°C
°C
°C
Unit
K/W
Unit
V
Absolute Maximum Ratings
Note / Test Conditions
Note / Test Conditions
All pins
Note / Test Condition
All pins except RF input pin
Electrical Characteristics
V3.2, 2009-05-27