BGA 751L7 E6327 Infineon Technologies, BGA 751L7 E6327 Datasheet - Page 13
BGA 751L7 E6327
Manufacturer Part Number
BGA 751L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet
1.BGA_751L7_E6327.pdf
(22 pages)
Specifications of BGA 751L7 E6327
Mounting Style
SMD/SMT
Operating Frequency
800 MHz to 900 MHz
Noise Figure
1.05 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.3 mA, 0.5 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA751L7E6327XT
Noise Figure
2.13
T
Power Gain
Data Sheet
A
= 25 °C,
1.8
1.6
1.4
1.2
0.8
0.6
−10
−11
−40
1
−5
−6
−7
−8
−9
0.86
V
Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency
|S
CC
NF
−20
21
= 2.8 V,
| = f (
= f (
0.87
0
T
f
A
Frequency [GHz]
)
)
V
20
GS
T
A
= 0 V,
[°C]
0.88
40
Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency
V
60
EN
0.89
= 2.8 V,
80
−30°C
25°C
85°C
100
0.9
R
REF
BGA751L7 - Low Power Single-Band UMTS LNA
Input Compression
= n/c
13
Power Gain wideband
−10
−12
−14
−2
−4
−6
−8
−10
−20
−30
−40
−50
−60
−40
0
0
0
−20
P1dB
0
2
Frequency [GHz]
|S
= f (
20
T
21
A
| = f (
T
Electrical Characteristics
[°C]
A
4
40
)
f
)
60
V3.2, 2009-05-27
6
80
100
8