BGA 751L7 E6327 Infineon Technologies, BGA 751L7 E6327 Datasheet - Page 11

• Manufacturer Part Number: BGA 751L7 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Single Band Low Noise Amplifierr

Specifications of BGA 751L7 E6327

• Mounting Style: SMD/SMT
• Operating Frequency: 800 MHz to 900 MHz
• Noise Figure: 1.05 dB
• Operating Supply Voltage: 2.6 V to 3 V
• Supply Current: 3.3 mA, 0.5 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Package / Case: TSLP-7-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA751L7E6327XT

2.11
T
Power Gain
Matching |
Data Sheet
A
= 25 °C,
−10
−15
−20
−25
−30
18
17
16
15
14
13
−5
S
0.86
0.86
0
V
11
Measured Performance Low Band (Band V) High Gain Mode vs. Frequency
|S
CC
| = f (
21
= 2.8 V,
| = f (
f
0.87
0.87
), |
f
Frequency [GHz]
Frequency [GHz]
S
)
V
22
GS
| = f (
= 2.8 V,
0.88
0.88
Measured Performance Low Band (Band V) High Gain Mode vs. Frequency
f
)
V
0.89
0.89
EN
= 2.8 V,
−30°C
25°C
85°C
S
S
22
11
0.9
0.9
BGA751L7 - Low Power Single-Band UMTS LNA
R
REF
11
= n/c
Power Gain wideband
Gainstep HG-LG
23.5
22.5
−10
−20
−30
−40
−50
−60
20
10
24
23
22
0.86
0
0
|
∆
0.87
S
2
21
Frequency [GHz]
Frequency [GHz]
| = f (
|S
21
| = f (
Electrical Characteristics
0.88
f
4
)
f
)
0.89
V3.2, 2009-05-27
6
−30°C
−30°C
−30°C
25°C
25°C
25°C
85°C
85°C
85°C
0.9
8