BGA 751L7 E6327 Infineon Technologies, BGA 751L7 E6327 Datasheet

RF Amplifier RF SILICON MMIC

BGA 751L7 E6327

Manufacturer Part Number
BGA 751L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet

Specifications of BGA 751L7 E6327

Mounting Style
SMD/SMT
Operating Frequency
800 MHz to 900 MHz
Noise Figure
1.05 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.3 mA, 0.5 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA751L7E6327XT
D a t a S h e e t , V 3 . 2 , M a y 2 0 0 9
B G A 7 5 1 L 7
S i ng l e - B an d U M T S L N A
( 8 0 0 , 9 0 0 M H z )
R F & P r o t e c t i o n D e v i c e s

Related parts for BGA 751L7 E6327

BGA 751L7 E6327 Summary of contents

Page 1

& P ...

Page 2

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

Page 3

BGA751L7 Revision History: 2009-05-27, V3.2 Previous Version: 2008-11-24, V3.1 Page Subjects (major changes since last revision) 7 Updated DC Characteristics (added limits Updated footnotes Data Sheet BGA751L7 - Low Power Single-Band UMTS LNA 3 V3.2, 2009-05-27 ...

Page 4

Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

Description The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green ...

Page 6

Electrical Characteristics 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol V Supply voltage CC I Supply current CC V Pin voltage PIN V Pin voltage RF Input Pin RFIN P RF input power RFIN T Junction ...

Page 7

DC Characteristics Table 4 DC Characteristics, Parameter Symbol V Supply voltage CC I Supply current high gain CCHG mode I Supply current low gain CCLG mode I Supply current standby CCOFF mode V Logic level high HI V Logic ...

Page 8

Supply current and Power gain characteristics; Supply current and Power gain high gain mode versus reference resistor R independent of reference resistor). Note: In order to achieve higher gain an external reference resistor can be soldered between RREF (Pin ...

Page 9

Measured RF Characteristics UMTS Bands Table 7 Typical Characteristics 800 MHz Band, Parameter Pass band range band V Pass band range band VI Current consumption Gain 1) Reverse Isolation Noise figure 1) Input return loss 1) ...

Page 10

Measured RF Characteristics UMTS Band VIII Table 8 Typical Characteristics 900 MHz Band, Parameter Pass band range band VIII Current consumption Gain 1) Reverse Isolation Noise figure 1) Input return loss 1) Output return loss 2) Stability factor 1) ...

Page 11

Measured Performance Low Band (Band V) High Gain Mode vs. Frequency ° Power Gain | = ...

Page 12

Measured Performance Low Band (Band V) High Gain Mode vs. Temperature NF f Noise Figure = 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.86 0.87 0.88 Frequency [GHz] 2.12 Measured Performance Low Band (Band V) ...

Page 13

NF T Noise Figure = 1.8 1.6 1.4 1.2 1 0.8 0.6 −40 − [°C] A 2.13 Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency ...

Page 14

Matching | | = −5 −10 −15 −20 −25 −30 0.86 0.87 0.88 Frequency [GHz Noise Figure = ...

Page 15

Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature 2.14 Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature 2 2 ...

Page 16

Application Circuit and Block Diagram 3.1 UMTS bands V and VI Application Circuit Schematic Figure 2 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has grounded. Table 9 Parts List Part Number ...

Page 17

UMTS band VIII Application Circuit Schematic Figure 3 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has grounded. Table 10 Parts List Part Number Part Type L1, L2 Chip inductor C1 ... ...

Page 18

Application Board Figure 4 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 µm Cu metallization, gold plated. Board size Figure 5 Cross-section view of application board ...

Page 19

Figure 6 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. ...

Page 20

Physical Characteristics 4.1 Package Dimensions 1.4 0.3 0.3 0.3 Copper Solder mask Figure 7 Recommended footprint and stencil layout for the TSLP-7-1 package Top view Pin 1 marking 1) Dimension applies to plated terminal Figure 8 ...

Page 21

Figure 10 Marking Layout Data Sheet BGA751L7 - Low Power Single-Band UMTS LNA 21 Physical Characteristics Package Dimensions V3.2, 2009-05-27 ...

Page 22

... Published by Infineon Technologies AG ...

Related keywords