QVE11233 Fairchild Semiconductor, QVE11233 Datasheet
Home Sensors, Transducers Photointerruptors QVE11233
Manufacturer Part Number
QVE11233
Description
Photointerruptors 1mA PHOTO TRANS
Manufacturer
Fairchild Semiconductor
Specifications of QVE11233
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Sensing Method
Photo Transistor
Output Collector Emitter Voltage (detector)
30 V
Maximum Reverse Voltage (emitter)
5 V
Slot Width
3.81 mm
Aperture Width
2 mm
Output Device
Phototransistor
Power Dissipation
100 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
Fairchild Semiconductor
©2009 Fairchild Semiconductor Corporation
QVE11233 Rev. 1.0.0
QVE11233
Sloted Optical Switch
Features
Package Dimensions
Notes:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± 0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
0.331 (8.38)
Lead spacing 0.300”
Gap width of 0.150”
Printed circuit board mounting
2mm aperture width
0.25 (6.35)
0.15 (3.81)
.020 (.50)
X
2
1
+
E
0.50 (12.70)
SECTION X-X
X
0.03 (0.76)
2 PLCS
S
+
3
4
0.35 (8.89) MIN
.020 (.50)
.03 (.75)
.023 (.60)
0.30 (7.62)
C L
0.09 (2.03)
0.71 (1.78)
2 PLCS
0.46 (11.68)
PIN 1 ANODE
PIN 2 CATHODE
PIN 3 COLLECTOR
PIN 4 EMITTER
Description
The QVE11233 is designed to allow the user maximum
flexibility in applications. Each switch consists of an
infrared emitting diode facing an NPN phototransistor
across a 0.150” (3.81mm) gap.
(3.18)
0.125±0.005
0.10 (2.54)
L C
0.071 (1.78)
Schematic
2
1
November 2009
www.fairchildsemi.com
3
4
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QVE11233 Summary of contents
... Tolerance of ± 0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2009 Fairchild Semiconductor Corporation QVE11233 Rev. 1.0.0 Description The QVE11233 is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a 0.150” (3.81mm) gap. ...
... OUTPUT (SENSOR) BV Emitter to Collector Breakdown ECO BV Collector to Emitter Breakdown CEO I Collector to Emitter Leakage CEO COUPLED I On-State Collector Current C(ON) V Saturation Voltage CE (SAT) ©2009 Fairchild Semiconductor Corporation QVE11233 Rev. 1.0 25°C unless otherwise specified) A Parameter (2)(3)(4) (2)(4) (1) ( 25°C) A Test Conditions I = 20mA ...
... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation QVE11233 Rev. 1.0.0 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...
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