FOD817A3S Fairchild Semiconductor, FOD817A3S Datasheet - Page 5

• Manufacturer Part Number: FOD817A3S
• Description: Transistor Output Optocouplers Opto Phototransistor Output SM-DIP4
• Manufacturer: Fairchild Semiconductor

Specifications of FOD817A3S

• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 18 us
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 200 mV
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 160 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP SMD Black
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Typical Electrical/Optical Characteristics
200
150
100
100
0.1
50
10
0
1
6
5
4
3
2
1
0
-55
Fig. 5 Forward Current vs. Forward Voltage
0.5
0
Fig. 3 Collector-Emitter Saturation Voltage
-40 -20
vs. Ambient Temperature (FOD814)
Fig. 1 Collector Power Dissipation
AMBIENT TEMPERATURE T
T
2.5
A
FORWARD CURRENT I
= 110
50
FORWARD VOLTAGE V
75
o
C
o
C
vs. Forward Current
o
C
5.0
1.0
0
Ic = 0.5mA
7mA
1mA
3mA
5mA
(FOD817)
20 40 60 80 100 120
7.5
-30
-55
0
25
o
C
o
o
10.0
o
C
C
C
1.5
Ta = 25°C
F
F
(mA)
A
12.5
(V)
(°C)
15.0
2.0
5
(T
A
= 25°C Unless otherwise specified.)
200
150
100
100
140
120
100
0.1
10
50
80
60
40
20
0
1
0
-55
Fig. 4 Forward Current vs. Forward Voltage
0. 1 0.2
0.5
V
Ta= 25°C
-40 -20
vs. Ambient Temperature (FOD817)
Fig. 2 Collector Power Dissipation
CE
AMBIENT TEMPERATURE T
T
A
=
FORWARD CURRENT I
Fig. 6 Current Transfer Ratio
= 105
50
FORWARD VOLTAGE V
5V
0.5 1
75
o
C
o
C
vs. Forward Current
FOD817
o
C
1.0
0
FOD814
(FOD814)
20 40 60 80 100 120
2
-30
-55
5 10 20
0
25
o
C
o
o
o
C
C
C
1.5
F
F
(mA)
A
(V)
(°C)
50 100
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