FOD817A3S Fairchild Semiconductor, FOD817A3S Datasheet - Page 4

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FOD817A3S

Manufacturer Part Number
FOD817A3S
Description
Transistor Output Optocouplers Opto Phototransistor Output SM-DIP4
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FOD817A3S

Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
200 mV
Isolation Voltage
5000 Vrms
Current Transfer Ratio
160 %
Maximum Forward Diode Voltage
1.4 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP SMD Black
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FOD817A3SD
Manufacturer:
FSC
Quantity:
4 000
Part Number:
FOD817A3SD
0
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Electrical Characteristics
Isolation Characteristics
*Typical values at T
Notes:
1. Current Transfer Ratio (CTR) = I
2. For test circuit setup and waveforms, refer to page 7.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol
R
C
V
ISO
ISO
ISO
Input-Output Isolation
Voltage
Isolation Resistance
Isolation Capacitance
Characteristic
(3)
A
= 25°C
C
/I
(T
F
A
x 100%.
FOD814,
FOD817
FOD814,
FOD817
FOD814,
FOD817
= 25°C Unless otherwise specified.) (Continued)
Device
f = 60Hz, t = 1 min,
I
V
V
I-O
Test Conditions
I-O
I-O
= 500VDC
= 0, f = 1 MHz
2µA
4
5x10
5000
Min.
10
1x10
Typ.*
0.6
11
Max.
1.0
www.fairchildsemi.com
Vac(rms)
Units
pf

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