FOD2741B Fairchild Semiconductor, FOD2741B Datasheet - Page 3
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FOD2741B
Manufacturer Part Number
FOD2741B
Description
Transistor Output Optocouplers Error amplifier Optocoupler
Manufacturer
Fairchild Semiconductor
Datasheet
1.FOD2741B.pdf
(15 pages)
Specifications of FOD2741B
Maximum Input Diode Current
20 mA
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
400 mV
Isolation Voltage
5000 Vrms
Current Transfer Ratio
200 %
Maximum Forward Diode Voltage
1.5 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
145 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FOD2741B_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FOD2741B
Manufacturer:
FAIRCHIL
Quantity:
1 550
Part Number:
FOD2741B
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FOD2741BSD
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FOD2741BSDV
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
FOD2741A, FOD2741B, FOD2741C Rev. 1.0.1
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate linearly from 25°C at a rate of 2.42mW/°C
2. Derate linearly from 25°C at a rate of 1.42mW/°C.
3. Derate linearly from 25°C at a rate of 2.42mW/°C.
Symbol
V
V
T
T
T
V
PD1
PD2
PD3
I
LED
OPR
CEO
ECO
STG
SOL
LED
I
C
Storage Temperature
Operating Temperature
Lead Solder Temperature
Input Voltage
Input DC Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Input Power Dissipation
Transistor Power Dissipation
Total Power Dissipation
Parameter
(T
A
(3)
(1)
= 25°C unless otherwise specified)
(2)
3
260 for 10 sec.
-40 to +125
-40 to +85
Value
145
145
37
20
30
50
85
7
Units
mW
mW
mW
www.fairchildsemi.com
mA
mA
°C
°C
°C
V
V
V