FOD3180TV Fairchild Semiconductor, FOD3180TV Datasheet - Page 12

High Speed Optocouplers 2A IGBT/FET GTE DRV OPTOCOUPLER

FOD3180TV

Manufacturer Part Number
FOD3180TV
Description
High Speed Optocouplers 2A IGBT/FET GTE DRV OPTOCOUPLER
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FOD3180TV

Input Type
DC
Isolation Voltage
5000 Vrms
Minimum Forward Diode Voltage
1.2 V
Output Device
Transistor
Configuration
1 Channel
Maximum Forward Diode Voltage
1.8 V
Maximum Reverse Diode Voltage
5 V
Maximum Input Diode Current
25 mA
Maximum Power Dissipation
295 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
DIP-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FOD3180TV
Manufacturer:
Fairchild Semiconductor
Quantity:
1 969
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
I
This device is tested and specified when driving a com-
plex reactive load. The load consists of a capacitor in the
series with a current limiting resistor. The capacitor rep-
resents the gate to source capacitance of a power
MOSFET transistor. The test load is a 0.03µF capacitor
in series with an 8.5 resistor. The LED test frequency is
10.0kHz with a 50% duty cycle. The combined I
I
frequency.
OL
OH
output load current duty factor is 0.6% at the test
and I
OUTPUT
OL
Current
Load
100
LED
Test Conditions
Generator
Pulse
20V
Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive
0
100
IF
MON
I
1
2
3
4
F
= 8mA
I
OH
Figure 15. Test Schematic
= 2.2A
P-Channel (ON)
FOD3180
OH
ON
and
12
1µs/Div
Figure 14 illustrates the relationship of the LED input
drive current and the device’s output voltage and sourc-
ing and sinking currents. The 0.03µF capacitor load rep-
resents the gate to source capacitance of a very large
power MOSFET transistor. A single supply voltage of
20V is used in the evaluation.
Figure 15 shows the test schematic to evaluate the out-
put voltage and sourcing and sinking capability of the
device. The I
their respective current pulses.
8
7
6
5
V
O
0.33 F
OH
and I
8.5
I
OL
N-Channel (ON)
OL
= 2.2A
are measured at the peak of
OFF
0.1 F
22 F
IO
MON
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