QSB363CGR Fairchild Semiconductor, QSB363CGR Datasheet - Page 3

• Manufacturer Part Number: QSB363CGR
• Description: Photodetector Transistors T-3/4 PHOTO SENSOR
• Manufacturer: Fairchild Semiconductor
• Type: IR Chipr

Specifications of QSB363CGR

• Maximum Power Dissipation: 75 mW
• Maximum Dark Current: 100 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Package / Case: T-3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2011 Fairchild Semiconductor Corporation
QSB363C Rev. 1.0.3
Typical Performance Curves
10
100
160
140
120
100
10
10
10
10
Fig. 1 Collector Power Dissipation vs.
5
2
5
2
5
2
5
2
80
60
40
20
80
60
40
20
-10
Fig. 3 Relative Collector Current vs.
-25
-6
-7
-8
-9
0
0
0
0
Fig. 5 Collector Dark Current vs.
V
CE
V
E e = 1 mW/cm
CE
= 20 V
10
Ambient Temperature T
Ambient Temperature T
= 5 V
Ambient Temperature
Ambient Temperature
Ambient Temperature
0
Ambient Temperature (°C)
25
20
2
25
30
50
40
50
50
A
A
75
(˚C)
(˚C)
75 85 100
60
100
70
3
0.001
1.0
0.8
0.6
0.4
0.2
0.01
14
12
10
0.1
8
6
4
2
0
10
0
1
0.01
100
0
V
T
T
A
CE
A
Fig. 6 Collector Current vs.
Fig. 4 Collector Current vs.
= 25˚C
Fig. 2 Spectral Sensitivity
= 25˚C
Collector Emitter Voltage V
= 5 V
Collector Emitter Voltage
300
Irradiance E
1
Wavelength λ (nm)
500
0.1
Irradiance
700
2
e
Ee=1.50mW/cm
Ee=1.25mW/cm
Ee=1.0mW/cm
Ee=0.75mW/cm
Ee=0.5mW/cm
(mW/cm
900
1
3
CE
2
)
1100
(V)
www.fairchildsemi.com
2
2
2
2
2
1300
10
4