QSB363CGR Fairchild Semiconductor, QSB363CGR Datasheet

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... NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. ©2011 Fairchild Semiconductor Corporation QSB363C Rev. 1.0.3 Description The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. EMITTER 0.087 (2.2) ...

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... Collector-Emitter Breakdown Voltage CEO BV Emitter-Collector Breakdown Voltage ECO I On-State Collector Current C(on) V Collector-Emitter Saturation Voltage CE (SAT) t Rise Time r t Fall Time f ©2011 Fairchild Semiconductor Corporation QSB363C Rev. 1.0 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) ( 25°C) A Test Conditions V = 20V 0mW/ 100µ ...

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... Ambient Temperature T Fig. 5 Collector Dark Current vs. Ambient Temperature - - Ambient Temperature (°C) ©2011 Fairchild Semiconductor Corporation QSB363C Rev. 1.0 100 (˚ (˚ 100 3 Fig. 2 Spectral Sensitivity 1 25˚C A 0.8 0.6 0.4 0.2 0 100 300 500 700 900 1100 Wavelength λ (nm) Fig ...

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... R0.031±.004 (0.8±0.1) R0.016±.004 (0.4±0.1) 0.185±0.008 (4.7±0.2) 0.291±0.008 (7.4±0.2) ©2011 Fairchild Semiconductor Corporation QSB363C Rev. 1.0.3 Z-Bend Lead Configuration ø0.075±0.008 Emitter 0.051±0.004 (1.3±0.1) 0.029±0.004 0.055± ...

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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ F-PFS™ ® Auto-SPM™ FRFET Global Power Resource Build it Now™ Green FPS™ ...