QSE133 Fairchild Semiconductor, QSE133 Datasheet - Page 3

• Manufacturer Part Number: QSE133
• Description: Photodetector Transistors Phototransistor Darlington Sidelook
• Manufacturer: Fairchild Semiconductor
• Type: Phototransistorr

Specifications of QSE133

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Collector-emitter Breakdown Voltage: 30 V
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: Side Looker
• Transistor Polarity: NPN
• Wavelength Typ: 880nm
• Power Consumption: 100mW
• Viewing Angle: 25°
• No. Of Pins: 2
• No. Of Channels: 1
• Operating Temperature Range: -40°C To +100°C
• Input Current Max: 100µA
• Rohs Compliant: Yes
• Phototransistor Type: PhotoDarlington
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Black Transparent
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector-emitter Sat Volt (max): 1V
• Dark Current (max): 100nA
• Light Current: 9mA
• Rise Time: 20000ns
• Fall Time: 50000ns
• Power Dissipation: 100mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 50deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Side Looker
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 Fairchild Semiconductor Corporation
10
10
10
10
10
10
10
10
10
1
0
-1
-2
-3
3
2
1
0
0.1
0
V
GaAs Light Source
CE
Figure 3. Dark Current vs. Collector - Emitter Voltage
= 5V
Figure 1. Light Current vs. Radiant Intensity
5
V
E
CE
e
- Radiant Intensity (mW/cm
- Collector-Emitter Voltage (V)
10
15
10
10
10
10
10
10
10
10
20
6
5
4
3
2
1
0
-1
25
2
Normalized to:
V
T
)
CE
A
= 25°C
= 25V
Figure 5. Dark Current vs. Ambient Temperature
INFRARED PHOTOTRANSISTOR
25
Page 3 of 4
T
A
1
30
50
- Ambient Temperature ( °C )
180
170
10
10
10
10
10
160
1.0
1
0
-1
-2
-3
0.1
150
V
CE
140
=25V
0.8
Figure 4. Light Current vs. Collector - Emitter Voltage
75
130
V
CE
0.6
120
=10V
Figure 2. Angular Response Curve
V
PLASTIC SILICON
0.4
CE
110
- Collector-Emitter Voltage (V)
0.2
100
1
100
I e =1mW/cm
I e =0.5mW/cm
I e =0.2mW/cm
I e =0.1mW/cm
0.0
0.0
90
80
0.2
2
2
2
2
70
0.4
60
0.6
Normalized to:
V
I e = 0.5mW/cm
T
A
CE
QSE133
10
50
= 25°C
= 5V
0.8
40
30
1.0
20
2
10
5/1/02
0