QSE113E3R0 Fairchild Semiconductor, QSE113E3R0 Datasheet - Page 3
QSE113E3R0
Manufacturer Part Number
QSE113E3R0
Description
Photodetector Transistors 0.25mA, 5V Phototransistor
Manufacturer
Fairchild Semiconductor
Type
IR Chipr
Datasheet
1.QSE113E3R0.pdf
(4 pages)
Specifications of QSE113E3R0
Maximum Power Dissipation
100 mW
Maximum Dark Current
100 nA
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
Side Looker
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
QSE113E3R0_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QSE113E3R0
Manufacturer:
EPCOS
Quantity:
207
© 2002 Fairchild Semiconductor Corporation
10
10
10
10
10
-1
-2
-3
0
1
0
10
10
10
1
0
-1
0.1
V
GaAs Light Source
Figure 3. Dark Current vs. Collector - Emitter Voltage
CE
= 5V
5
Figure 1. Light Current vs. Radiant Intensity
V
CE
E
e
10
- Collector-Emitter Voltage (V)
- Radiant Intensity (mW/cm
15
10
10
10
10
10
10
4
3
2
1
0
-1
25
Normalized to:
V
T
20
A
CE
= 25°C
= 25V
2
Figure 5. Dark Current vs. Ambient Temperature
)
25
INFRARED PHOTOTRANSISTOR
T
A
50
- Ambient Temperature ( °C)
Page 3 of 4
1
30
180
170
160
1.0
150
10
10
10
10
V
1
0
-1
-2
140
0.1
CE
75
0.8
= 25V
130
Figure 4. Light Current vs. Collector - Emitter Voltage
V
0.6
CE
120
Figure 2. Angular Response Curve
= 10V
0.4
110
V
PLASTIC SILICON
CE
QSE113
0.2
100
100
- Collector-Emitter Voltage (V)
0.0
0.0
90
1
I e = 1mW/cm
I e = 0.5mW/cm
I e = 0.2mW/cm
I e = 0.1mW/cm
80
0.2
70
0.4
2
2
2
2
60
0.6
50
Normalized to:
V
I e = 0.5mW/cm
T
CE
A
QSE114
= 25°C
0.8
10
= 5V
40
30
1.0
20
10
0
2
5/1/02