QSE113E3R0 Fairchild Semiconductor, QSE113E3R0 Datasheet - Page 2

• Manufacturer Part Number: QSE113E3R0
• Description: Photodetector Transistors 0.25mA, 5V Phototransistor
• Manufacturer: Fairchild Semiconductor
• Type: IR Chipr

Specifications of QSE113E3R0

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: Side Looker
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: QSE113E3R0_NL

© 2002 Fairchild Semiconductor Corporation
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5. λ = 880 nm (AlGaAs).
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation
ELECTRICAL / OPTICAL CHARACTERISTICS
Parameter
Peak Sensitivity
Reception Angle
Collector Emitter Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current
QSE113
On-State Collector Current
QSE114
Saturation Voltage
Rise Time
Fall Time
(1)
(5)
(5)
(5)
(2,3,4)
(2,3)
V
I
I
E
E
E
I
C
E
C
CE
e
e
e
= 100 µA
= 1mA, V
= 1 mA
= 0.5 mW/cm
= 0.5 mW/cm
= 0.5 mW/cm
= 10 V, E
Test Conditions
(T
A
CC
INFRARED PHOTOTRANSISTOR
= 25°C unless otherwise specified)
e
= 5V, R
= 0
2
2
2
, V
, V
, I
C
Page 2 of 4
CE
CE
= 0.1 mA
L
= 5 V
= 5 V
= 100 Ω
(T
A
=25°C unless otherwise specified)
V
Symbol
BV
BV
I
I
CE(SAT)
I
C(ON)
C(ON)
λ
CEO
Θ
PS
t
CEO
ECO
t
r
f
Symbol
T
T
T
T
SOL-F
V
V
SOL-I
P
OPR
STG
CE
EC
D
PLASTIC SILICON
0.25
1.00
Min
QSE113
30
—
—
—
—
—
—
5
260 for 10 sec
240 for 5 sec
-40 to +100
-40 to +100
Rating
880
±25
Typ
—
—
—
—
—
—
100
8
8
30
5
Max
1.50
100
0.4
—
—
—
—
—
—
—
QSE114
Unit
mW
°C
°C
°C
°C
V
V
Units
Deg.
nM
mA
mA
nA
µs
µs
5/1/02
V
V
V