QEE113E3R0 Fairchild Semiconductor, QEE113E3R0 Datasheet - Page 4

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QEE113E3R0

Manufacturer Part Number
QEE113E3R0
Description
Infrared Emitters infrared Lt Emitting Plastic
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of QEE113E3R0

Beam Angle
+/- 25
Radiant Intensity
12 mW/sr
Maximum Forward Current
50 mA
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.5 V
Wavelength
940 nm
Package / Case
Side Looker
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
QEE113E3R0_NL
©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
Typical Performance Curves
180
170
160
1.0
150
140
0.8
130
0.6
120
Fig. 7 Radiation Diagram
0.4
110
0.2
100
0.0
90
80
0.2
70
0.4
(Continued)
60
0.6
50
0.8
40
30
1.0
20
10
0
4
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 8 Coupling Characteristics of QEE113 And QSE113
0
1
LENS TIP SEPARATION (inches)
2
3
4
Normalized to:
d = 0 inch
I
t
Duty Cycle = 0.1%
V
R
T
F
pw
A
CC
L
Pulsed
= 25 C
= 100
= 100 s
www.fairchildsemi.com
= 5V
5
6

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