QEE113E3R0 Fairchild Semiconductor, QEE113E3R0 Datasheet

no-image

QEE113E3R0

Manufacturer Part Number
QEE113E3R0
Description
Infrared Emitters infrared Lt Emitting Plastic
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of QEE113E3R0

Beam Angle
+/- 25
Radiant Intensity
12 mW/sr
Maximum Forward Current
50 mA
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.5 V
Wavelength
940 nm
Package / Case
Side Looker
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
QEE113E3R0_NL
©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
QEE113
Plastic Infrared Light Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
Package Type = Sidelooker
Chip Material = GaAs
Matched Photosensor: QSE113
Medium Wide Emission Angle, 50°
Package Material: Clear Epoxy
High Output Power
Gray stripe on the top side
= 940nm
unless otherwise specified.
0.050 (1.27)
Ø0.095 (2.41)
0.020 (0.51) SQ.
0.087 (2.22)
CATHODE
PACKAGE DIMENSIONS
0.030 (0.76)
(2X)
0.100 (2.54)
0.175 (4.44)
0.100 (2.54)
NOM
ANODE
Ø0.065 (1.65)
0.500 (12.70)
0.200 (5.08)
MIN
Description
The QEE113 is a 940nm GaAs LED encapsulated in a
medium wide angle, plastic sidelooker package.
Schematic
CATHODE
ANODE
www.fairchildsemi.com
August 2008

Related parts for QEE113E3R0

QEE113E3R0 Summary of contents

Page 1

... Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 Description The QEE113 is a 940nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. 0.175 (4.44) Ø ...

Page 2

... Temperature Coefficient VF I Reverse Current R I Radiant Intensity E TC Temperature Coefficient IE t Rise Time r t Fall Time f C Junction Capacitance j ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) ( 25°C) A Test Conditions Min 20mA 100mA F ...

Page 3

... 20ms PW Duty Cycle = 4% 3 2.5 2.0 1.5 1.0 10 100 I – FORWARD CURRENT (mA) F ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 975 970 965 960 955 950 945 940 935 900 950 1,000 1,050 0 Fig. 4 Normalized Radient Intensity vs. Ambient Temperature 1.4 1.2 1 ...

Page 4

... Typical Performance Curves Fig. 7 Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 (Continued) Fig. 8 Coupling Characteristics of QEE113 And QSE113 0.2 0 0.2 0.4 0.6 ...

Page 5

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ F-PFS™ FRFET CorePLUS™ CorePOWER™ Global Power Resource CROSSVOLT™ ...

Related keywords