MCIMX513DJM8CR2 Freescale Semiconductor, MCIMX513DJM8CR2 Datasheet - Page 27

• Manufacturer Part Number: MCIMX513DJM8CR2
• Description: IC MPU I.MX51 529MABGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX51r

Specifications of MCIMX513DJM8CR2

• Core Processor: ARM Cortex-A8
• Core Size: 32-Bit
• Speed: 800MHz
• Connectivity: 1-Wire, EBI/EMI, Ethernet, I²C, IrDA, MMC, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: ROMless
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 0.8 V ~ 1.15 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 529-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

4.3.4
The parameters in
Freescale Semiconductor
High-level output voltage
Low-level output voltage
High-level output current, low voltage mode
High-level output current, high voltage mode
Low-level output current, low voltage mode
Low-level output current, high voltage mode
Low-Level DC input voltage
1
2
3
High-Level DC input voltage
Schmitt trigger VT+
Schmitt trigger VT–
Input current (no pull-up/down)
Input current (22 kΩ Pull-up)
Input current (47 kΩ Pull-up)
Input current (100 kΩ Pull-up)
Input current (100 kΩ Pull-down)
Keeper Circuit Resistance
To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s.
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
I/O leakage currents are listed in
DC Electrical Characteristics
DC Electrical Characteristics
Ultra-High Voltage I/O (UHVIO) DC Parameters
1, 2
1, 2
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
Table 21
2,3
1
,
Table 20. LVIO DC Electrical Characteristics (continued)
2
are guaranteed per the operating ranges in
Table
Table 21. UHVIO DC Electrical Characteristics
25.
Symbol
VT+
VT–
Iin
Iin
Iin
Iin
Iin
—
Symbol
Ioh_hv
Ioh_lv
Iol_hv
Iol_lv
Voh
VIH
VIL
Vol
Test Conditions
OVDD = 1.875 V
OVDD = 2.775 V
VI = 0 or OVDD
VI = OVDD
Vout = 0.8 × OVDD
Vout = 0.8 × OVDD
Vout = 0.2 × OVDD
Vout = 0.2 × OVDD
VI = 0
VI = 0
VI = 0
Test Conditions
—
—
Medium Drive
Medium Drive
Medium Drive
Medium Drive
Iout = –1mA
Iout = 1mA
High Drive
High Drive
High Drive
High Drive
Low Drive
Low Drive
Low Drive
Low Drive
—
—
0.5 × OVDD
Min
—
—
—
—
—
—
—
—
Table
OVDD–0.15
0.7 × OVDD
–10.2
–15.3
–2.2
–4.4
–6.6
–5.1
10.2
15.3
Min
2.2
4.4
6.6
5.1
—
0
13, unless otherwise noted.
Typ
—
22
17
—
—
—
—
—
—
Electrical Characteristics
Typ
—
—
—
—
—
—
—
—
0.5 × OVDD
See Note
0.3 × OVDD
Max
161
—
76
36
36
—
—
OVDD
Max
0.15
—
—
—
—
—
3
Unit
μA
μA
μA
μA
kΩ
—
V
V
Unit
mA
mA
mA
mA
V
V
V
V
27