FCH35N60 Fairchild Semiconductor, FCH35N60 Datasheet - Page 4

MOSFET N-CH 600V 35A TO-247

FCH35N60

Manufacturer Part Number
FCH35N60
Description
MOSFET N-CH 600V 35A TO-247
Manufacturer
Fairchild Semiconductor
Series
SuperMOS™r
Datasheet

Specifications of FCH35N60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
98 mOhm @ 17.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
181nC @ 10V
Input Capacitance (ciss) @ Vds
6640pF @ 25V
Power - Max
312.5W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
79 mOhms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
35 A
Power Dissipation
312.5 W
Forward Transconductance Gfs (max / Min)
28.8 S
Gate Charge Qg
139 nC
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCH35N60
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FCH35N60 Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.01
300
100
0.1
10
-100
1
1
Operation in This Area
is Limited by R
vs. Temperature
-50
T
J
V
, Junction Temperature
DS
0.001
, Drain-Source Voltage [V]
0.01
0
10
0.6
0.1
DS(on)
10
*Notes:
-5
1. T
2. T
3. Single Pulse
Single pulse
0.05
0.02
0.01
0.2
0.1
0.5
50
C
J
= 150
= 25
DC
o
C
o
100
10ms
Figure 11. Transient Thermal Response Curve
C
100
10
-4
*Notes:
1. V
2. I
[
1ms
o
C
D
150
100
]
GS
= 250
= 0V
μ
s
Rectangular Pulse Duration [sec]
10
μ
10
A
μ
200
1000
-3
s
(Continued)
10
-2
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
30
20
10
10
-100
0
*Notes:
25
-1
P
1. Z
2. Duty Factor, D= t
3. T
DM
θ
JM
JC
vs. Temperature
(t) = 0.4
- T
-50
vs. Case Temperature
50
C
T
T
t
J
1
= P
C
, Junction Temperature
t
, Case Temperature
2
1
o
DM
C/W Max.
0
* Z
1
75
θ
/t
JC
2
(t)
50
10
100
100
[
o
C
*Notes:
[
]
1. V
2. I
o
C
125
www.fairchildsemi.com
D
150
]
GS
= 17.5A
= 10V
200
150

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