FCA16N60N Fairchild Semiconductor, FCA16N60N Datasheet - Page 5
![MOSFET N-CH 600V TO-3PN](/photos/26/98/269851/to3p_sml.jpg)
FCA16N60N
Manufacturer Part Number
FCA16N60N
Description
MOSFET N-CH 600V TO-3PN
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet
1.FCA16N60N.pdf
(8 pages)
Specifications of FCA16N60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52.3nC @ 10V
Input Capacitance (ciss) @ Vds
2170pF @ 100V
Power - Max
134.4W
Mounting Type
Through Hole
Package / Case
TO-3PN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
16 A
Power Dissipation
134.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA16N60N Rev. A1
5
www.fairchildsemi.com