FCP16N60N Fairchild Semiconductor, FCP16N60N Datasheet - Page 4
![MOSFET N-CH 600V 16A TO-220-3](/photos/5/30/53099/261-to-220-3_sml.jpg)
FCP16N60N
Manufacturer Part Number
FCP16N60N
Description
MOSFET N-CH 600V 16A TO-220-3
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet
1.FCP16N60N.pdf
(10 pages)
Specifications of FCP16N60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52.3nC @ 10V
Input Capacitance (ciss) @ Vds
2170pF @ 100V
Power - Max
134.4W
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
170mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
TO-220
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
134.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCP16N60N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FCP16N60N / FCPF16N60NT Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current
0.01
100
1.2
1.1
1.0
0.9
0.8
0.1
10
20
15
10
-100
1
5
0
25
1
Operation in This Area
is Limited by R
-50
_ FCP16N60N
vs. Temperature
50
T
T
vs. Case Temperature
V
J
C
, Junction Temperature
DS
, Case Temperature
, Drain-Source Voltage [V]
10
0
DS(on)
75
*Notes:
1. T
2. T
3. Single Pulse
50
C
J
= 150
= 25
DC
100
o
10ms
C
o
100
100
C
[
o
1ms
C
*Notes:
[
]
o
1. V
2. I
125
C
100 s
150
]
D
GS
= 1mA
= 0V
20 s
1000
200
150
(Continued)
4
0.01
Figure 8. On-Resistance Variation
Figure 10. Maximum Safe Operating Area
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
-100
1
1
Operation in This Area
is Limited by R
-50
T
vs. Temperature
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
_ FCPF16N60NT
10
0
DS(on)
*Notes:
1. T
2. T
3. Single Pulse
DC
50
C
J
= 150
= 25
10ms
o
C
o
100
100
C
1ms
*Notes:
[
1. V
2. I
100 s
o
C
D
150
]
GS
= 8A
20 s
www.fairchildsemi.com
= 10V
1000
200