FDP054N10 Fairchild Semiconductor, FDP054N10 Datasheet - Page 2

• Manufacturer Part Number: FDP054N10
• Description: MOSFET N-CH 100V TO-220AB-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP054N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 203nC @ 10V
• Input Capacitance (ciss) @ Vds: 13280pF @ 25V
• Power - Max: 263W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP054N10 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.41mH, I
3: I
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
J
DSS
FDP054N10
≤ 75A, di/dt ≤ 200A/μs, V
AS
= 75A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDP054N10
G
DSS
Device
= 25Ω, Starting T
Parameter
, Starting T
T
J
C
= 25°C
= 25
J
= 25°C
o
C unless otherwise noted
Package
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
GS
DS
DS
GS
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 100V, V
= 100V, V
= 0V, I
= ±20V, V
= 25V, V
= 80V, I
= 50V, I
= 10V, R
= 0V, I
= V
= 10V, I
= 10V, I
= 10V
DS
Test Conditions
, I
SD
2
SD
D
D
Reel Size
D
D
D
GS
GS
GEN
= 75A
= 75A
= 75A
=75A
GS
= 75A
DS
= 250μA
= 75A,
GS
= 0V
= 0V, T
-
= 0V
= 0V
= 4.7Ω
= 0V, T
C
C
(Note 4,5)
(Note 4,5)
= 25
= 150
(Note 4)
(Note 4)
o
C
o
C
Tape Width
o
C
-
Min.
100
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9985
Typ.
0.01
121
935
390
156
192
3.5
4.6
44
92
80
39
57
53
48
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
13280
Max.
±100
1245
194
170
500
585
203
144
576
1.3
4.5
5.5
98
88
50
1
-
-
-
-
-
-
-
Units
V/
mΩ
nC
nC
nC
μA
pF
pF
pF
nC
nA
ns
ns
ns
ns
ns
V
A
A
V
V
S
o
C