FDB024N04AL7 Fairchild Semiconductor, FDB024N04AL7 Datasheet - Page 4
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FDB024N04AL7
Manufacturer Part Number
FDB024N04AL7
Description
MOSFET N-CH 40V D2PAK-7
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDB024N04AL7.pdf
(9 pages)
Specifications of FDB024N04AL7
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
109nC @ 10V
Input Capacitance (ciss) @ Vds
7300pF @ 25V
Power - Max
214W
Mounting Type
Surface Mount
Package / Case
TO-263-8, D²Pak (7 leads + Tab), TO-263CA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 mOhms
Forward Transconductance Gfs (max / Min)
368 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
219 A
Power Dissipation
214 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
84 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDB024N04AL7
Manufacturer:
FSC
Quantity:
4 800
Part Number:
FDB024N04AL7
Manufacturer:
ON/安森美
Quantity:
20 000
FDB024N04AL7 Rev. A2
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Unclamped Inductive Switching
3000
1000
1.11
1.08
1.05
1.02
0.99
0.96
0.93
100
100
0.1
600
10
10
-100
0.001
1
1
0.1
Operation in This Area
is Limited by R
vs. Temperature
If R = 0
t
If R ≠ 0
t
AV
AV
-50
0.01
= (L)(I
= (L/R)ln[(I
T
Capability
J
V
, Junction Temperature
*Notes:
t
DS
STARTING T
AV
1. T
2. T
3. Single Pulse
AS
, Drain-Source Voltage [V]
, TIME IN AVALANCHE (ms)
)/(1.3*RATED BV
0
0.1
C
J
AS
= 175
1
= 25
DS(on)
*R)/(1.3*RATED BV
o
o
C
50
C
J
1
= 150
STARTING T
DSS
o
100
C
10
- V
*Notes:
10
1. V
2. I
[
DD
DSS
100
o
1ms
10ms
100ms
C
)
D
DC
150
GS
]
μ
- V
100
= 250
J
s
= 25
= 0V
DD
) +1]
μ
o
A
C
200
1000
60
(Continued)
4
Figure 8. On-Resistance Variation vs.
Figure 10. Maximum Drain Current vs.
240
180
120
2.0
1.6
1.2
0.8
0.4
60
-100
0
25
-50
50
Temperature
Limited by package
T
T
J
C
, Junction Temperature
, Case Temperature
Case Temperature
0
100
50
100
[
o
*Notes:
C
[
1. V
2. I
]
o
C
D
150
150
]
GS
= 80A
www.fairchildsemi.com
= 10V
175
200