FDB024N04AL7 Fairchild Semiconductor, FDB024N04AL7 Datasheet - Page 4

• Manufacturer Part Number: FDB024N04AL7
• Description: MOSFET N-CH 40V D2PAK-7
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB024N04AL7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 109nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D²Pak (7 leads + Tab), TO-263CA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 mOhms
• Forward Transconductance Gfs (max / Min): 368 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 219 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB024N04AL7 Rev. A2
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Unclamped Inductive Switching
3000
1000
1.11
1.08
1.05
1.02
0.99
0.96
0.93
100
100
0.1
600
10
10
-100
0.001
1
1
0.1
Operation in This Area
is Limited by R
vs. Temperature
If R = 0
t
If R ≠ 0
t
AV
AV
-50
0.01
= (L)(I
= (L/R)ln[(I
T
Capability
J
V
, Junction Temperature
*Notes:
t
DS
STARTING T
AV
1. T
2. T
3. Single Pulse
AS
, Drain-Source Voltage [V]
, TIME IN AVALANCHE (ms)
)/(1.3*RATED BV
0
0.1
C
J
AS
= 175
1
= 25
DS(on)
*R)/(1.3*RATED BV
o
o
C
50
C
J
1
= 150
STARTING T
DSS
o
100
C
10
- V
*Notes:
10
1. V
2. I
[
DD
DSS
100
o
1ms
10ms
100ms
C
)
D
DC
150
GS
]
μ
- V
100
= 250
J
s
= 25
= 0V
DD
) +1]
μ
o
A
C
200
1000
60
(Continued)
4
Figure 8. On-Resistance Variation vs.
Figure 10. Maximum Drain Current vs.
240
180
120
2.0
1.6
1.2
0.8
0.4
60
-100
0
25
-50
50
Temperature
Limited by package
T
T
J
C
, Junction Temperature
, Case Temperature
Case Temperature
0
100
50
100
[
o
*Notes:
C
[
1. V
2. I
]
o
C
D
150
150
]
GS
= 80A
www.fairchildsemi.com
= 10V
175
200