FDMS7650 Fairchild Semiconductor, FDMS7650 Datasheet - Page 5

• Manufacturer Part Number: FDMS7650
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7650

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 990 mOhm @ 36A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 209nC @ 10V
• Input Capacitance (ciss) @ Vds: 14965pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 mOhms
• Forward Transconductance Gfs (max / Min): 267 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMS7650 Rev.E
Typical Characteristics
0.001
0.01
0.1
2
1
10
-3
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-2
T
J
= 25 °C unless otherwise noted
SINGLE PULSE
R
θ
10
JA
-1
t, RECTANGULAR PULSE DURATION (sec)
= 125
o
C/W
5
1
10
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
100
θJA
DM
1
/t
x R
2
θJA
t
1
+ T
t
2
A
www.fairchildsemi.com
1000