FDPF10N60ZUT Fairchild Semiconductor, FDPF10N60ZUT Datasheet - Page 3
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FDPF10N60ZUT
Manufacturer Part Number
FDPF10N60ZUT
Description
MOSFET N-CH 600V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDPF10N60ZUT.pdf
(9 pages)
Specifications of FDPF10N60ZUT
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1980pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.65 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
9 A
Power Dissipation
42 W
Forward Transconductance Gfs (max / Min)
12.5 S
Gate Charge Qg
31 nC
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF10N60ZUT
Manufacturer:
Fairchi/ON
Quantity:
17 418
FDP10N60ZU/FDPF10N60ZUT Rev. A
Typical Performance Characteristics
3000
2500
2000
1500
1000
500
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
20
10
Figure 1. On-Region Characteristics
1
0
0.1
1
0
V
GS
=
5
V
10.0 V
V
Drain Current and Gate Voltage
DS
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
DS
C
C
C
, Drain-Source Voltage [V]
rss
iss
oss
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
10
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
1
V
GS
= 10V
15
*Notes:
1. 250
2. T
* Note : T
V
C
GS
20
= 25
μ
s Pulse Test
= 20V
* Note:
o
10
C
1. V
2. f = 1MHz
J
10
= 25
25
GS
= 0V
o
C
20
30
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
10
10
30
20
10
8
6
4
2
0
1
1
0.0
0
3
Variation vs. Source Current
and Temperature
V
SD
Q
, Body Diode Forward Voltage [V]
4
V
0.5
10
g
V
V
V
, Total Gate Charge [nC]
GS
DS
DS
DS
,Gate-Source Voltage[V]
= 150V
= 380V
= 400V
150
5
o
C
1.0
20
* Notes :
1. V
2. 250
Notes:
1. V
2. 250
6
25
* Note : I
DS
o
GS
C
150
25
μ
μ
= 20V
s Pulse Test
= 0V
s Pulse Test
o
1.5
30
o
C
C
www.fairchildsemi.com
D
7
= 10A
2.0
40
8