FDMS7560S Fairchild Semiconductor, FDMS7560S Datasheet - Page 4

• Manufacturer Part Number: FDMS7560S
• Description: MOSFET N-CH 25V/20V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7560S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.45 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 5945pF @ 13V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7560S Rev.C
Typical Characteristics
0.01
300
100
0.1
10
50
10
10
8
6
4
2
0
1
Figure 7.
0.01
1
0.01
0
THIS AREA IS
LIMITED BY r
Figure 9.
I
Figure 11. Forward Bias Safe
D
= 30 A
10
V
Switching Capability
0.1
SINGLE PULSE
T
R
T
DS
Gate Charge Characteristics
J
A
t
0.1
AV
JA
, DRAIN to SOURCE VOLTAGE (V)
= MAX RATED
= 25
Operating Area
20
DS(on)
Unclamped Inductive
, TIME IN AVALANCHE (ms)
Q
= 125
g
, GATE CHARGE (nC)
o
C
o
V
C/W
30
DD
1
= 10 V
T
J
1
= 125
40
V
T
T
J
DD
J
= 25
o
10
= 25 °C unless otherwise noted
C
= 13 V
50
o
T
C
J
10
= 100
V
DD
100
= 16 V
60
o
C
10 s
100 ms
DC
1 ms
10 ms
1 s
500
100
70
4
1000
10000
100
1000
0.5
200
150
100
10
100
50
1
0
Figure 10.
10
0.1
25
-3
Figure 12.
f = 1 MHz
V
Limited by Package
Figure 8.
GS
Current vs Case Temperature
V
GS
= 0 V
10
= 10 V
V
-2
50
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
c
,
Single Pulse Maximum
Capacitance vs Drain
10
CASE TEMPERATURE (
t, PULSE WIDTH (sec)
-1
75
1
V
GS
1
= 4.5 V
R
V
JC
100
GS
= 1.4
= 10 V
10
SINGLE PULSE
R
T
o
A
C/W
JA
o
= 25
C )
= 125
125
10
100
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o
C
C
C
C
o
oss
rss
C/W
iss
1000
150
30