FDMC86102 Fairchild Semiconductor, FDMC86102 Datasheet - Page 2

• Manufacturer Part Number: FDMC86102
• Description: MOSFET N-CH 100V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC86102

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 965pF @ 50V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 32.8 mOhms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMC86102 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
3. Starting T
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
∆T
∆T
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
J
= 25
o
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C; N-ch: L = 1 mH, I
AS
Parameter
= 12 A, V
DD
a.
2
T
53 °C/W when mounted on a
1 in
= 90 V, V
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
2
pad of 2 oz copper
GS
= 10 V.
I
I
V
V
V
I
V
V
V
V
D
D
D
V
V
V
V
V
f = 1 MHz
V
V
I
DS
GS
GS
GS
GS
GS
DD
F
DS
DD
GS
GS
GS
= 250 µA, V
= 250 µA, referenced to 25 °C
GS
GS
= 250 µA, referenced to 25 °C
= 7 A, di/dt = 100 A/µs
= 80 V, V
= ±20 V, V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 50 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
= 50 V, V
= 0 V, I
= 0 V, I
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
D
GS
GS
= 5 A
= 7 A
= 2 A
GS
GEN
DS
= 250 µA
= 7 A
= 7 A, T
= 7 A
= 7 A,
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
V
I
D
DD
= 7 A
J
= 50 V
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
Min
100
2.0
0.81
0.75
19.4
26.8
32.8
Typ
725
175
3.7
3.6
3.1
44
40
0.5
14
13
19
15
69
-9
8
4
4
8
±100
Max
θCA
1.3
1.2
965
235
70
65
www.fairchildsemi.com
4.0
17
10
25
10
18
11
24
38
41
25
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S