FDMC7660 Fairchild Semiconductor, FDMC7660 Datasheet - Page 3

• Manufacturer Part Number: FDMC7660
• Description: MOSFET N-CH 30V 20A 8-PQFN
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7660

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 4830pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC7660 Rev.C1
Typical Characteristics
200
150
100
200
150
100
50
1.6
1.4
1.2
1.0
0.8
50
Figure 3. Normalized On Resistance
0
Figure 1.
0
0.0
-75
Figure 5. Transfer Characteristics
1
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
V
D
GS
-50
vs Junction Temperature
= 20 A
V
DS
= 10 V
V
= 5 V
T
V
DS
-25
V
On Region Characteristics
J
GS
V
0.5
,
GS
GS
,
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
V
V
= 3.5 V
= 4 V
GS
GS
2
V
0
= 4.5 V
GS
= 3 V
T
J
= 10 V
T
= 25
25
J
P
1.0
= 150
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
50
T
o
J
C
= 25°C unless otherwise noted
75
3
1.5
T
o
100 125 150
C )
J
= -55
o
C
P
s
2.0
4
3
200
100
0.1
10
3.0
2.5
2.0
1.5
1.0
0.5
15
10
1
5
0
0.2
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
= 0 V
T
V
T
J
J
SD
= 150
= 25
0.4
, BODY DIODE FORWARD VOLTAGE (V)
V
V
Normalized On-Resistance
On-Resistance vs Gate to
GS
GS
50
I
o
Source Voltage
D
4
C
Source to Drain Diode
,
o
= 3 V
,
C
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
I
D
T
= 20 A
J
= 125
0.6
V
V
GS
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
= 4.5 V
100
= 3.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
0.8
T
J
V
= -55
GS
150
T
V
J
8
GS
= 10 V
1.0
= 25
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o
= 4 V
C
P
o
s
C
P
s
1.2
200
10