FDMS7660AS Fairchild Semiconductor, FDMS7660AS Datasheet - Page 5

• Manufacturer Part Number: FDMS7660AS
• Description: MOSFET N-CH 30V PWRSTAGE POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7660AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 6120pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 m Ohms
• Forward Transconductance Gfs (max / Min): 455 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 42 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7660AS Rev.C
Typical Characteristics
0.001
0.01
0.1
1
2
10
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-2
SINGLE PULSE
R
θ
JA
T
= 125
J
= 25 °C unless otherwise noted
o
C/W
10
-1
t, RECTANGULAR PULSE DURATION (sec)
5
1
10
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
θJA
DM
100
1
/t
x R
2
θJA
t
1
+ T
t
2
A
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