FDMC7672 Fairchild Semiconductor, FDMC7672 Datasheet - Page 4

• Manufacturer Part Number: FDMC7672
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7672

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 16.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 3890pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Forward Transconductance Gfs (max / Min): 82 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 16.9 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C2
Typical Characteristics
0.01
0.1
20
10
70
10
10
1
0.01
1
Figure 7.
0.01
8
6
4
2
0
0
I
Figure 9.
D
Figure 11.
= 16.9 A
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
JA
= MAX RATED
= 25
V
Switching Capability
= 125
DS
9
0.1
0.1
Gate Charge Characteristics
t
AV
o
, DRAIN to SOURCE VOLTAGE (V)
C
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE (ms)
o
Q
C/W
g
DS(on)
, GATE CHARGE (nC)
Forward Bias Safe
T
J
V
= 125
18
DD
= 10 V
1
1
o
C
V
T
DD
27
T
J
J
= 25 °C unless otherwise noted
= 20 V
= 25
10
10
o
V
C
DD
T
J
36
= 15 V
= 100
100 ms
100 s
1 ms
10 s
DC
10 ms
1 s
100
100
o
C
200
45
200
4
2000
1000
5000
1000
100
0.5
100
70
60
50
40
30
20
10
10
Figure 10.
50
0
1
10
0.1
25
Figure 12.
-4
Figure 8.
Limited by Package
f = 1 MHz
V
SINGLE PULSE
R
T
A
GS
Current vs Case Temperature
JA
V
= 25
GS
10
= 0 V
= 125
-3
= 10 V
V
o
50
C
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
o
T
, DRAIN TO SOURCE VOLTAGE (V)
C/W
Capacitance vs Drain
c
10
Single Pulse Maximum
,
CASE TEMPERATURE (
-2
t, PULSE WIDTH (sec)
75
10
1
R
-1
JC
V
= 4.0
GS
1
100
= 4.5 V
o
C/W
10
o
C )
125
V
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10
GS
C
C
100
C
= 10 V
rss
oss
iss
1000
150
30