FDMC7680 Fairchild Semiconductor, FDMC7680 Datasheet - Page 3

• Manufacturer Part Number: FDMC7680
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7680

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 14.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2855pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.4 mOhms
• Forward Transconductance Gfs (max / Min): 68 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 14.8 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7680 Rev.C2
Typical Characteristics
45
36
27
18
1.6
1.4
1.2
1.0
0.8
0.6
45
36
27
18
9
0
Figure 3. Normalized On- Resistance
9
0
0.0
Figure 1.
-75
1
Figure 5. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
I
V
V
D
GS
DS
= 14.8 A
-50
vs Junction Temperature
= 10 V
= 5 V
V
GS
V
V
DS
T
= 4 V
-25
0.5
GS
On-Region Characteristics
J
T
,
,
2
J
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
V
V
V
= 150
GS
GS
GS
0
= 10 V
= 6 V
= 4.5 V
o
C
25
1.0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
3
50
T
J
= 25 °C unless otherwise noted
T
J
75
T
= -55
J
= 25
1.5
4
o
100 125 150
o
C )
V
V
C
o
GS
GS
C
= 3.5 V
= 3 V
2.0
5
3
0.001
0.01
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
25
20
15
10
10
5
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
= 0 V
V
= 3.5 V
0.2
SD
T
J
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
= 150
9
On-Resistance vs Gate to
GS
I
D
Source Voltage
4
Source to Drain Diode
,
= 14.8 A
GATE TO SOURCE VOLTAGE (V)
o
I
D
C
0.4
,
DRAIN CURRENT (A)
18
V
GS
0.6
V
6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
GS
= 4 V
T
T
J
J
= 6 V
= 125
27
= 25
0.8
o
o
C
C
T
J
T
8
= -55
J
www.fairchildsemi.com
V
V
36
= 25
GS
GS
1.0
o
= 4.5 V
= 10 V
C
o
C
1.2
45
10