FDMC7692 Fairchild Semiconductor, FDMC7692 Datasheet - Page 2

• Manufacturer Part Number: FDMC7692
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7692

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 13.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1680pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.5 mOhms
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7692 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. E
BV
'BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
'V
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
'T
'T
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
TJA
AS
DSS
GS(th)
DSS
J
J
of 58 mJ is based on starting T
is determined with the device mounted on a 1 in
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25
Parameter
o
C, L = 1 mH, I
a. 53 °C/W when mounted on
a 1 in
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
2
AS
pad of 2 oz copper
= 10.8 A, V
DD
I
I
V
V
V
V
V
V
V
V
I
= 27 V, V
V
I
V
V
V
V
V
f = 1 MHz
D
D
F
D
DS
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DS
= 13.3 A, di/dt = 100 A/Ps
= 250 PA, V
= 250 PA, referenced to 25 °C
= 250 PA, referenced to 25 °C
= 24 V, V
= 0 V, I
= 0 V, I
= 20 V, V
= 10 V, I
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= V
= 10 V, I
= 4.5 V, I
= 5 V, I
GS
2
DS
= 10 V.
Test Conditions
, I
S
S
D
D
D
= 13.3 A
= 1.9 A
D
D
GS
DS
GS
GEN
GS
D
= 13.3 A
= 13.3 A,
= 250 PA
= 13.3 A, T
= 13.3 A
= 10.6 A
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 :
V
I
D
T
DD
= 13.3 A
J
= 125 °C
= 15 V
J
= 125 °C
(Note 2)
(Note 2)
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
TJC
is guaranteed by design while R
Min
1.2
30
1260
0.86
0.75
Typ
480
1.9
7.2
9.5
9.5
0.9
24
65
21
21
10
16
60
-6
7
9
4
3
5
3
1680
TCA
11.5
12.0
Max
635
100
www.fairchildsemi.com
1.2
1.2
250
100
2.4
3.0
8.5
18
10
33
10
29
14
38
14
1
is determined by
mV/°C
mV/°C
Units
m:
nC
nC
nC
nC
nC
PA
nA
pF
pF
pF
ns
ns
ns
ns
ns
:
V
V
V
S