FDMS7672AS Fairchild Semiconductor, FDMS7672AS Datasheet - Page 4
![MOSFET N-CH 30V SYNCFET POWER56](/photos/37/61/376185/power56_sml.jpg)
FDMS7672AS
Manufacturer Part Number
FDMS7672AS
Description
MOSFET N-CH 30V SYNCFET POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet
1.FDMS7672AS.pdf
(8 pages)
Specifications of FDMS7672AS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
2820pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 m Ohms
Forward Transconductance Gfs (max / Min)
97 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
42 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7672AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMS7672AS Rev.C
Typical Characteristics
0.01
300
100
0.1
30
10
10
10
1
8
6
4
2
0
Figure 7.
0.01
1
0.01
0
THIS AREA IS
LIMITED BY r
I
Figure 9.
D
Figure 11. Forward Bias Safe
= 18 A
5
V
Switching Capability
DS
0.1
Gate Charge Characteristics
SINGLE PULSE
T
R
T
0.1
t
AV
, DRAIN to SOURCE VOLTAGE (V)
J
A
θ
Operating Area
JA
10
DS(on)
= MAX RATED
Unclamped Inductive
= 25
, TIME IN AVALANCHE (ms)
Q
= 125
g
, GATE CHARGE (nC)
o
V
C
DD
15
o
T
C/W
= 10 V
J
1
= 125
1
T
J
20
= 25
T
o
C
J
V
= 25 °C unless otherwise noted
o
DD
C
T
10
J
= 15 V
25
= 100
10
V
DD
o
C
1 s
100
1 ms
10 ms
100 ms
10 s
DC
30
= 20 V
µ
100200
s
100
35
4
3000
1000
3000
1000
100
100
0.5
90
60
30
10
Figure 10.
50
0
1
10
0.1
25
Figure 12.
-4
f = 1 MHz
V
Limited by Package
SINGLE PULSE
R
T
Figure 8.
GS
Current vs Case Temperature
A
θ
JA
V
= 25
= 0 V
GS
10
= 125
-3
= 10 V
V
o
50
C
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
o
, DRAIN TO SOURCE VOLTAGE (V)
T
C/W
c
10
Single Pulse Maximum
Capacitance vs Drain
,
CASE TEMPERATURE (
-2
R
t, PULSE WIDTH (sec)
θ
JC
75
1
= 2.7
10
-1
o
C/W
1
100
V
GS
= 4.5 V
10
o
C )
V
C
C
C
GS
125
www.fairchildsemi.com
iss
oss
rss
10
= 10 V
100
1000
150
30