FDD050N03B Fairchild Semiconductor, FDD050N03B Datasheet - Page 3

• Manufacturer Part Number: FDD050N03B
• Description: MOSFET N-CH 30V 90A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD050N03B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2875pF @ 15V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD050N03B Rev. A1
Typical Performance Characteristics
1000
4000
3000
2000
1000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
Figure 1. On-Region Characteristics
10
10
1
0.01
9
8
7
6
5
4
3
0
0.1
0
V
GS
V
=
GS
15.0 V
10.0 V
Drain Current and Gate Voltage
V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
V
= 4.5V
50
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
0.1
100
1
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
C
C
C
oss
iss
rss
*Notes:
150
1. 250
2. T
*Notes: T
C
= 25
μ
(
s Pulse Test
V
C ds = shorted
*Notes:
GS
o
1
200
1. V
2. f = 1MHz
C
10
C
= 10V
= 25
GS
= 0V
o
C
)
250
30
4
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
500
100
300
100
10
0.1
10
10
1
8
6
4
2
0
1
0.2
0
1
*Notes:
1. V
2. 250
V
0.4
5
SD
DS
Variation vs. Source Current
and Temperature
μ
, Body Diode Forward Voltage [V]
= 20V
s Pulse Test
V
Q
2
GS
g
10
, Total Gate Charge [nC]
175
, Gate-Source Voltage[V]
0.6
175
o
C
o
15
C
V
V
V
DS
DS
DS
0.8
3
= 6V
= 15V
= 24V
20
25
*Notes:
1. V
2. 250
-55
o
C
1.0
*Notes: I
o
GS
25
C
25
μ
o
= 0V
s Pulse Test
C
4
1.2
D
30
= 50A
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