FDT3N40TF Fairchild Semiconductor, FDT3N40TF Datasheet - Page 2

• Manufacturer Part Number: FDT3N40TF
• Description: MOSFET N-CH 400V 2A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDT3N40TF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDT3N40 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, I
3. I
4. Pulse Test: Pulse width  300s, Duty Cycle  2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
T
 2A, di/dt  200A/s, V
DSS
FDT3N40
J
AS
= 2A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
 BV
Parameter
FDT3N40TF
G
DSS
Device
= 25, Starting T
, Starting T
J
= 25C
J
T
= 25C
C
= 25°C unless otherwise noted
Package
SOT-223
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250A, Referenced to 25C
/dt =100A/s
= 25
= 400V, V
= 320V, T
= V
= 40V, I
= 25V, V
= 320V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 200V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 2A
= 2A
= 250A
GS
DS
D
D
DS
C
= 1A
GS
= 1A
= 250A
= 2A
= 2A
Reel Size
= 125C
= 0V
= 0V,
= 0V
= 0V
330mm
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
12mm
Min.
400
3.0
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Typ.
0.75
173
210
0.4
3.7
1.2
2.8
4.5
30
10
30
10
25
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2
2
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Quantity
Max Units
-100
100
225
www.fairchildsemi.com
5.0
3.4
1.4
10
40
30
70
30
60
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1
--
6
6
--
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2
8
--
4000
V/C
A
A
nA
nA
pF
pF
pF
nC
nC
nC
C
ns
ns
ns
ns
ns

V
V
S
A
A
V