FDD3N50NZTM Fairchild Semiconductor, FDD3N50NZTM Datasheet - Page 3

• Manufacturer Part Number: FDD3N50NZTM
• Description: MOSFET N-CH 500V DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDD3N50NZTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD3N50NZ Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
0.03
400
300
200
100
0.1
10
5.6
4.8
4.0
3.2
2.4
1.6
1
0
0.1
0.1
0
V
*Note:
GS
1. V
2. f = 1MHz
=
Drain Current and Gate Voltage
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
V
= 0V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
2
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
1
V
*Notes:
GS
1. 250
2. T
= 10V
*Note: T
C
4
= 25
µ
(
s Pulse Test
C ds = shorted
o
V
C
10
GS
C
10
= 25
= 20V
C
C
C
iss
oss
rss
o
C
)
25
30
6
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.1
0.1
10
20
10
10
1
1
8
6
4
2
0
0.3
3
0
V
4
SD
Variation vs. Source Current
and Temperature
150
, Body Diode Forward Voltage [V]
V
0.6
Q
GS
150
o
g
C
, Gate-Source Voltage[V]
V
V
V
2
, Total Gate Charge [nC]
DS
DS
DS
o
5
C
= 100V
= 250V
= 400V
0.9
6
25
*Notes:
o
-55
C
4
1. V
2. 250
25
*Notes:
1. V
2. 250
o
o
C
C
DS
*Note: I
7
GS
µ
= 20V
s Pulse Test
µ
1.2
= 0V
s Pulse Test
D
8
= 2.5A
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6
1.5
9
7