NTLUD3191PZTBG ON Semiconductor, NTLUD3191PZTBG Datasheet - Page 5

• Manufacturer Part Number: NTLUD3191PZTBG
• Description: MOSFET P-CH 20V 1.7A DUAL 6UDFN
• Manufacturer: ON Semiconductor

Specifications of NTLUD3191PZTBG

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nc @ 4.5V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
DEVICE ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTLUD3191PZTAG
NTLUD3191PZTBG
175
150
125
100
0.000001
75
50
25
0
0.05
0.1
0.2
0.5
Device
0.00001
0.0001
0.01
0.1
10
1
0.1
V
SINGLE PULSE
T
C
Single Pulse
GS
Figure 13. Maximum Rated Forward Biased
−V
= 25°C
= −8 V
DS
0.001
Figure 14. FET Thermal Response
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
Safe Operating Area
0.01
1
http://onsemi.com
PULSE TIME (sec)
(Pb−Free)
(Pb−Free)
Package
LIMIT
UDFN6
UDFN6
0.01
0.02
5
10
0.1
10 ms
100 ms
1 ms
10 ms
dc
1
100
3000 / Tape & Reel
3000 / Tape & Reel
10
Shipping
†
100
1000