NTLUD3191PZTBG ON Semiconductor, NTLUD3191PZTBG Datasheet - Page 2

• Manufacturer Part Number: NTLUD3191PZTBG
• Description: MOSFET P-CH 20V 1.7A DUAL 6UDFN
• Manufacturer: ON Semiconductor

Specifications of NTLUD3191PZTBG

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nc @ 4.5V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

THERMAL RESISTANCE RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
DRAIN-SOURCE DIODE CHARACTERISTICS
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
V
J
V
V
(BR)DSS
= 25°C unless otherwise specified)
Symbol
V
Q
Parameter
GS(TH)
R
t
Q
(BR)DSS
t
d(OFF)
C
I
I
C
d(ON)
VSD
GS(TH)
C
G(TOT)
Q
DS(on)
Q
Q
DSS
GSS
t
g
G(TH)
RR
OSS
RSS
t
t
t
t
ISS
a
b
FS
GS
GD
RR
r
f
/T
/T
J
J
http://onsemi.com
V
I
V
V
V
DS
S
V
GS
GS
GS
V
= −1.0 A
GS
I
V
V
V
V
V
V
GS
V
D
= −20 V
V
GS
GS
GS
GS
DS
DS
I
GS
= 0 V,
= 0 V,
= 0 V, dISD/dt = 100 A/ms,
2
V
D
= −250 mA, ref to 25°C
GS
= −4.5 V, V
GS
= −4.5 V, V
= −1.5 A, R
Test Condition
= 0 V, V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −1.5 V, I
= −5.0 V, I
= 0 V, I
= V
V
= 0 V, f = 1 MHz,
I
ID = −1.5 A
S
DS
DS
= −1.0 A
= −10 V
, I
D
GS
D
= −250 mA
DD
DS
D
D
D
D
D
= 250 mA
G
= ±8.0 V
= −1.5 A
= −1.0 A
= −0.5 A
= −0.2 A
= −0.2 A
= −10 V,
= 1 W
T
T
= −10 V;
T
T
J
J
J
J
= 25°C
= 85°C
= 25°C
= 85°C
2
, 2 oz. Cu.
Min
−20
−0.4
Symbol
R
R
R
0.85
0.75
Typ
θJA
θJA
θJA
175
240
330
410
160
8.0
2.0
15
2.5
1.4
2.3
0.2
0.4
0.7
13
24
68
62
10
5.0
32
23
Max
−1.0
−10
−1.0
1.2
250
380
500
700
10
3.5
Max
155
100
245
mV/°C
mV/°C
Units
Units
°C/W
mA
mA
mW
ns
ns
nC
nC
pF
V
V
V
S