NTLUD3191PZTBG ON Semiconductor, NTLUD3191PZTBG Datasheet - Page 4

• Manufacturer Part Number: NTLUD3191PZTBG
• Description: MOSFET P-CH 20V 1.7A DUAL 6UDFN
• Manufacturer: ON Semiconductor

Specifications of NTLUD3191PZTBG

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nc @ 4.5V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
250
225
200
175
150
125
100
100
75
50
25
10
0
−50
0
1
V
V
I
Figure 9. Resistive Switching Time Variation
C
D
GS
DD
rss
= −1.5 A
−25
C
C
= −4.5 V
= −10 V
−V
iss
oss
DS
Figure 7. Capacitance Variation
4
Figure 11. Threshold Voltage
, DRAIN−TO−SOURCE VOLTAGE (V)
0
R
G
T
vs. Gate Resistance
, GATE RESISTANCE (W)
J
, TEMPERATURE (°C)
25
8
50
10
12
75
I
D
TYPICAL CHARACTERISTICS
100
= −250 mA
V
T
f = 1 MHz
16
J
GS
= 25°C
125
= 0 V
http://onsemi.com
t
t
t
t
d(on)
d(off)
r
f
150
100
20
4
0.0000001
5
4
3
2
1
0
0
175
150
125
100
1.0
0.1
10
75
50
25
Q
0
0.2
0.25
GS
Drain−to−Source Voltage vs. Total Charge
0.00001
Figure 10. Diode Forward Voltage vs. Current
0.3
Figure 12. Single Pulse Maximum Power
0.5
Figure 8. Gate−to−Source and
−V
Q
V
0.4
g
DS
0.0001
SD
, TOTAL GATE CHARGE (nC)
0.75
Q
T
GD
, SOURCE−TO−DRAIN VOLTAGE (V)
0.5
J
= 150°C
SINGLE PULSE TIME (s)
0.001
0.6
1
Q
T
Dissipation
1.25
0.7
0.01
0.8
1.5
0.1
0.9
1.75
T
J
1.0
V
I
T
= 25°C
1
D
J
GS
V
= −1.5 A
= 25°C
2
GS
1.1
= −10 V
10
2.25
1.2
100
2.5
1.3
12
10
8
6
4
2
0
1000
1.4