NTLUD3191PZTBG ON Semiconductor, NTLUD3191PZTBG Datasheet - Page 3

• Manufacturer Part Number: NTLUD3191PZTBG
• Description: MOSFET P-CH 20V 1.7A DUAL 6UDFN
• Manufacturer: ON Semiconductor

Specifications of NTLUD3191PZTBG

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nc @ 4.5V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
9
8
7
6
5
4
3
2
1
0
1.0
0
−50
I
T
D
J
V
I
Figure 3. On−Resistance vs. Gate Voltage
= −0.2 A
D
= 25°C
GS
Figure 5. On−Resistance Variation with
−25
= −1.5 A
Figure 1. On−Region Characteristics
1.5
−V
−V
= −4.5 V
DS
T
GS
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
, GATE−TO−SOURCE VOLTAGE (V)
V
GS
2.0
0
I
D
= −4.5 V
= −1.5 A
Temperature
25
2
2.5
50
3.0
3
75
3.5
TYPICAL CHARACTERISTICS
−4.0 V
100
T
4
J
= 25°C
4.0
−3.5 V
−2.5 V
http://onsemi.com
−3.0 V
−2.0 V
−1.8 V
−1.5 V
125
4.5
150
5
3
10000
1000
100
1.0
0.8
0.6
0.4
0.2
10
5
4
3
2
1
0
0
0
0
0
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
DS
GS
1
= −5 V
= 0 V
−V
−V
0.5
Figure 2. Transfer Characteristics
DS
GS
T
2
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
−1.8 V
5
= 125°C
−1.5 V
−I
3
D
, DRAIN CURRENT (A)
−2.5 V
1
Gate Voltage
vs. Voltage
4
T
T
T
J
J
T
J
= 125°C
J
= 85°C
= 150°C
1.5
10
= −55°C
5
T
J
6
= 25°C
2
7
V
GS
15
= −4.5 V
T
8
2.5
J
= 25°C
9
10
20
3