NTLUD3191PZTBG ON Semiconductor, NTLUD3191PZTBG Datasheet

MOSFET P-CH 20V 1.7A DUAL 6UDFN

NTLUD3191PZTBG

Manufacturer Part Number
NTLUD3191PZTBG
Description
MOSFET P-CH 20V 1.7A DUAL 6UDFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTLUD3191PZTBG

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.5nc @ 4.5V
Input Capacitance (ciss) @ Vds
160pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.25 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.4 A
Power Dissipation
800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NTLUD3191PZ
Power MOSFET
−20 V, −1.8 A, mCoolt Dual P−Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
2. Surface-mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 1
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Gate-to-Source ESD Rating
(HBM) per JESD22−A114F
Conduction
Products, such as Cell Phones, PMP, DSC, GPS, and others
UDFN Package with Exposed Drain Pads for Excellent Thermal
Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
ESD
This is a Halide Free Device
This is a Pb−Free Device
High Side Load Switch
PA Switch
Battery Switch
Optimized for Power Management Applications for Portable
[2 oz] including traces).
of 30 mm
2
, 2 oz. Cu.
Parameter
Steady
Steady
Steady
t ≤ 5 s
t ≤ 5 s
State
State
State
(T
J
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
tp = 10 ms
A
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
V
T
ESD
V
I
P
P
T
STG
T
DSS
DM
I
I
I
GS
D
D
S
J
D
D
L
,
Value
-55 to
1000
±8.0
−1.4
−1.0
−1.8
−1.1
−0.8
−8.0
−1.0
−20
150
260
0.8
1.3
0.5
1
Units
°C
°C
W
W
V
V
A
A
A
A
V
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
G1
V
1
(BR)DSS
−20 V
(Note: Microdot may be in either location)
ORDERING INFORMATION
6
AC = Specific Device Code
M = Date Code
G = Pb−Free Package
D1
http://onsemi.com
P−Channel MOSFET
250 mW @ −4.5 V
380 mW @ −2.5 V
500 mW @ −1.8 V
700 mW @ −1.5 V
CASE 517AT
S1
mCOOLt
R
(Top View)
UDFN6
DS(on)
Publication Order Number:
G2
MAX
NTLUD3191PZ/D
1
MARKING
DIAGRAM
D2
AC MG
I
D
−1.5 A
−1.0 A
−0.5 A
−0.2 A
G
MAX
S2

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NTLUD3191PZTBG Summary of contents

Page 1

NTLUD3191PZ Power MOSFET −20 V, −1.8 A, mCoolt Dual P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space ...

Page 2

THERMAL RESISTANCE RATINGS Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t ≤ (Note 3) Junction-to-Ambient – Steady State min Pad (Note 4) ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero ...

Page 3

V = −4 25° −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 1.0 0.9 0.8 0.7 0.6 0.5 ...

Page 4

C iss 175 150 125 100 oss 25 C rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 100 V = −4 −10 ...

Page 5

... DEVICE ORDERING INFORMATION Device NTLUD3191PZTAG NTLUD3191PZTBG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS = − 25° LIMIT DS(on) THERMAL LIMIT ...

Page 6

... NOTE 3 0.05 C 0.50 PITCH *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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