FDG6301N_F085 Fairchild Semiconductor, FDG6301N_F085 Datasheet - Page 4

• Manufacturer Part Number: FDG6301N_F085
• Description: MOSET N-CH DUAL DGTL FET SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6301N_F085

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDG6301N_F085 Rev. A
Typical Electrical Characteristics
0.03
0.01
0.3
0.1
6
5
4
3
2
1
0
Figure 9. Maximum Safe Operating Area.
Figure 7. Gate Charge Characteristics.
0
1
0.4
I
D
= 0.22A
0.005
0.002
SINGLE PULSE
0.05
0.02
0.01
R
0.5
0.2
0.1
V
0.0001
T
JA
1
0.1
GS
A
0.8
= 415 °C/W
= 25°C
= 4.5V
D = 0.5
0.2
V
0.1
DS
0.05
0.2
0.02
Q
, DRAIN-SOURCE VOLTAGE (V)
g
0.01
2
, GATE CHARGE (nC)
Single Pulse
V
DS
0.001
0.3
Figure 11. Transient Thermal Response Curve.
= 5V
5
10V
0.4
Thermal characterization performed using the conditions described in note 1.
10
Transient thermal response will change depending on the circuit board design.
0.01
0.5
( continued)
25
0.6
40
t , TIME (sec)
1
0.1
4
50
40
30
20
10
0.0001
0
30
15
Figure 10. Single Pulse Maximum Power
8
5
3
2
Figure 8. Capacitance Characteristics .
0.1
f = 1 MHz
V
GS
0.001
1
Dissipation.
= 0 V
0.3
V
DS
0.01
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
P(pk)
T - T
Duty Cycle, D = t / t
J
R
1
10
0.1
t
R
1
A
JA
t
= P * R
JA
2
(t) = r(t) * R
=415 °C/W
1
3
JA
1
SINGLE PULSE
R
(t)
2
www.fairchildsemi.com
JA
T = 25°C
JA
A
=415°C/W
100
10
10
C oss
C iss
C rss
200
200
25