FDG6301N_F085 Fairchild Semiconductor, FDG6301N_F085 Datasheet - Page 3

• Manufacturer Part Number: FDG6301N_F085
• Description: MOSET N-CH DUAL DGTL FET SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6301N_F085

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDG6301N_F085 Rev. A
Typical Electrical Characteristics
0.5
0.4
0.3
0.2
0.1
0.15
0.05
1.8
1.6
1.4
1.2
0.8
0.6
0.2
0.1
0
1
Figure 3. On-Resistance Variation
0
-50
0
0.5
V
Figure 1. On-Region Characteristics .
Figure 5. Transfer Characteristics.
DS
V
I = 0.22A
D
GS
-25
= 5V
= 4.5V
V
GS
with Temperature.
1
1
=4.5V
V
V
GS
T , JUNCTION TEMPERATURE (°C)
DS
0
J
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
3.5V
25
1.5
2
3.0V
50
2.7V
T = -55°C
J
2.5V
3
2
75
25°C
2.0V
100
125°C
2.5
4
125
150
3
5
3
20
16
12
0.0001
8
4
0
4.5
3.5
2.5
0.001
1
5
4
3
2
0.01
Figure 4. On-Resistance Variation with
0.4
0.1
0
Figure 6. Body Diode Forward Voltage
0
Figure 2. On-Resistance Variation with
V
GS
= 0V
V
0.2
V
V
GS
SD
GS
2
0.1
Gate-to-Source Voltage.
= 2.5V
Variation with Source Current
and Temperature.
, BODY DIODE FORWARD VOLTAGE (V)
,GATE TO SOURCE VOLTAGE (V)
Drain Current and Gate Voltage .
I
D
0.4
, DRAIN CURRENT (A)
2.7V
T = 125°C
J
0.2
3
3.0V
0.6
25°C
T =125°C
A
-55°C
3.5V
25°C
0.8
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4.0V
0.3
4
4.5V
I = 0.10A
D
1
5.0V
1.2
0.4
5